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IDR - Rp
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Specification Tables
1 Hasil
Single Bipolar Junction Transistors
132 Items
Transistor Case Style
TO-3, TO-205AD, TO-126, TO-247, TO-220
Collector Emitter Voltage Max
140 V, 25 V, 250 V, 200 V, 100 V
Power Dissipation
75 W, 60 W, 125 W, 50 W, 30 W
DC Current Gain hFE
240 hFE, 50 hFE, 75 hFE, 20 hFE, 25 hFE
Transition Frequency
2 MHz, 50 MHz, 10 MHz, 3 MHz, 30 MHz
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